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the MTT test. ZC finished the gastric cancer-bearing animal model preparation. LC and JW finished the RNase A@C-dots intratumor injection and imaging experiment. SG, WC, and CD designed and coordinated all the experiments. All authors read and approved the final manuscript.”
“Background The junctionless nanowire transistor (JNT), which contains a single doping species at the same level in its source, drain, and channel, has been recently investigated [1–6]. The junctionless (JL) device is basically a gated ASK1 resistor, in which the advantages of junctionless devices include (1) avoidance of the use of an ultra shallow source/drain junction, which greatly simplifies the process flow; (2) low thermal budgets owing to implant activation anneal after gate stack formation is eliminated,

and (3) the current transport is in the bulk of the semiconductor, which reduces the impact of imperfect semiconductor/insulator interfaces. As is widely recognized, the temperature dependence of threshold voltage (V th) is a parameter when integrated circuits often operate at an elevated temperature owing to heat generation. This effect, accompanied with the degradation of subthreshold swing (SS) with temperature, causes the fatal logic errors, leakage current, and excessive power dissipation. Despite a previous work that characterized JNTs at high temperatures [7], there is no information regarding the JL thin-film transistor (TFT) at a high temperature yet. Hence, this letter presents a high-temperature operation of JL TFTs with a gate-all-around structure (GAA) for an ultra-thin channel. The JL TFT with a planar structure functions as the control device.