Our measurement also allows independent measurement of the frequency-independent background noise S bg. The inset of Figure 4 shows the S bg with different applied V dc. We find that S bg is also reduced with increased V dc, although it is much less than the suppression of the flicker noise. The S bg was found to be the same as the Nyquist noise S nyq = 4k B T R, where R is the total resistance = R C + R NW. The reduction of the Nyquist noise occurs mainly due to reduction of R C by the dc bias. This analysis separates out the noise due to the contact resistance which appears in the frequency-independent Nyquist noise. The observed flicker noise (S V (f)) occurring on top of the Nyquist

noise has two components: one arising Fluorouracil datasheet from the junction region at the M-S interface and the other likely from the bulk of the Si NW. This can be intrinsic for the NW and can arise either from the defect-mediated mobility fluctuation or the carrier density fluctuation which arises from recombination-generation process [16]. The superimposed bias V dc dependence of the flicker noise cleanly separates out the above two contributions. Figure 4 The power spectral

density as a function of frequency f at few representative superimposed V d c . The inset shows the Nyquist noise for different V dc. To elucidate further, we have plotted the normalized mean square fluctuation 〈(Δ R)2 〉/R 2 as a function of V dc in Figure 5a. There is a steep decrease of 〈 (Δ R)2 〉/R 2 www.selleckchem.com/EGFR(HER).html by more than four orders, when V dc > 0.2 V. At low V dc (< barrier height), the noise is predominantly dominated by the junction noise. For higher V dc, the junction noise is suppressed substantially, and residual observed noise gets dominant contribution likely from the intrinsic noise due to the Si NW. The Staurosporine ic50 changing spectral character of PSD is quantified by α plotted against V dc in Figure 5b. We found that α is nearly 2 for low V dc and can arise from the depletion region at the M-S contact. For V dc > 0.2 V, α

decreases and reaches a bias-independent value of 0.8 ± 0.1. α ≈ 1 is an indication of conventional 1/f noise spectrum which arises from the Si NW. Figure 5 The variation of (a)  〈(ΔR) 2 〉 / R 2 and (b)  α as a function of V d c at 300 K. Evaluation of the noise in a single Si NW needs to be put in perspective and compared with bulk systems. In noise spectroscopy, one often uses a quantitative parameter for noise comparison is the Hooge parameter [17]. The spectral power of 1/f noise in many conductors often follows an empirical formula [17] where γ H is the Hooge’s parameter, and N is the number of carriers in the sample volume (between voltage probe leads). γ H is a useful guide when one compares different materials. Usually, a low γ H is associated with a sample with less defect density that contributes to the 1/f noise arising from the defect-mediated mobility fluctuation [18].